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March 2003
AO8804 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO8804 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its commondrain configuration.
Features
VDS (V) = 20V ID = 8A RDS(ON) < 13m (VGS = 10V) RDS(ON) < 14m (VGS = 4.5V) RDS(ON) < 19m (VGS = 2.5V) RDS(ON) < 27m (VGS = 1.8V) ESD Rating: 2000V HBM
TSSOP-8 Top View D1/D2 S1 S1 G1 1 2 3 4 8 7 6 5 D1/D2 S2 S2 G2
D1
D2
G1 S1
G2 S2
Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A
B
Maximum 20 12 8 6.3 30 1.5 1.08 -55 to 150
Units V V A
TA=25C TA=70C TA=25C TA=70C ID IDM PD TJ, TSTG
W C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C
Symbol t 10s Steady-State Steady-State RJA RJL
Typ 64 89 53
Max 83 120 70
Units C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
AO8804
Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter Conditions ID=250A, VGS=0V VDS=16V, VGS=0V TJ=55C VDS=0V, VGS=10V VDS=0V, IG=250uA VDS=VGS ID=250A VGS=4.5V, VDS=5V VGS=10V, ID=8A TJ=125C RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=5A VGS=2.5V, ID=4A VGS=1.8V, ID=3A gFS VSD IS Forward Transconductance VDS=5V, ID=8A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current 12 0.5 30 10 13.3 11.5 15.4 22.2 36 0.73 1 2.4 1810 VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz 232 200 1.6 17.9 VGS=4.5V, VDS=10V, ID=8A 1.5 4.7 2.5 VGS=10V, VDS=10V, RL=1.2, RGEN=3 IF=8A, dI/dt=100A/s 7.2 49 10.8 20.2 8 13 16 14 19 27 0.75 1 Min 20 10 25 10 Typ Max Units V A A V V A m m m m S V A pF pF pF nC nC nC ns ns ns ns ns nC
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS BVGSO VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate-Source Breakdown Voltage Gate Threshold Voltage On state drain current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=8A, dI/dt=100A/s
2
A: The value of R JA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any a given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating.
Alpha & Omega Semiconductor, Ltd.
AO8804
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40 35 30 25 ID (A) 20 15 10 5 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 30 25 RDS(ON) (m) 20 VGS=2.5V 15 VGS=4.5V 10 VGS=10V 5 0 5 10 15 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 40 35 30 RDS(ON) (m) 25 IS (A) 20 15 10 5 0 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25C 1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics 125C ID=5A 1.0E-01 1.0E-02 1.0E-03 25C 1.0E+01 1.0E+00 Normalized On-Resistance VGS=1.8V 1.6 ID=5A 1.4 VGS=4.5V VGS=2.5V VGS=1.5V 5 0 0 0.5 25C 1 1.5 2 VGS(Volts) Figure 2: Transfer Characteristics 2.5 ID(A) 20 15 10 125C 10 2.5V 4.5V 30 2V 25 VDS=5V
VGS=10V 1.2 VGS=1.8V 1
0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature
125C
Alpha & Omega Semiconductor, Ltd.
AO8804
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5 4 VGS (Volts) 3 2 1 0 0 4 8 12 16 20 Qg (nC) Figure 7: Gate-Charge Characteristics 3000 VDS=10V ID=8A Capacitance (pF) 2500 2000 1500 1000 500 0 0 Coss Crss 5 10 15 20 Ciss
VDS (Volts) Figure 8: Capacitance Characteristics
100.0
40 TJ(Max)=150C TA=25C Power (W) 100s 1ms 10ms 10s 30
RDS(ON) 10.0 limited ID (Amps)
20
1.0 TJ(Max)=150C TA=25C 0.1 0.1 1
1s
0.1s
10s DC 10 VDS (Volts) 100
10
0 0.001
0.01
0.1
1
10
100
1000
Figure 9: Maximum Forward Biased Safe Operating Area (Note E)
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10 ZJA Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=83C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD Ton Single Pulse
T
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
ALPHA & OMEGA
SEMICONDUCTOR, INC.
TSSOP-8 Package Data
SYMBOLS
DIMENSIONS IN MILLIMETERS
DIMENSIONS IN INCHES
A A1 A2 b c D E E1 e L y
MIN --- 0.05 0.80 0.19 0.09 2.90 4.30 0.45 --- 0
NOM --- --- 1.00 --- --- 3.00 6.40 BSC 4.40 0.65 BSC 0.60 --- ---
MAX 1.20 0.15 1.05 0.30 0.20 3.10 4.50 0.75 0.10 8
MIN --- 0.002 0.031 0.007 0.004 0.114 0.169 0.018 --- 0
NOM --- --- 0.039 --- --- 0.118 0.252 BSC 0.173 0.0259 (REF) 0.024 --- ---
MAX 0.047 0.006 0.041 0.012 0.008 0.122 0.177 0.030 0.004 8
NOTE: 1. LEAD FINISH: 150 MICROINCHES ( 3.8 um) MIN. THICKNESS OF Tin/Lead (SOLDER) PLATED ON LEAD 2. TOLERANCE 0.10 mm (4 mil) UNLESS OTHERWISE SPECIFIED 3. COPLANARITY : 0.10 mm 4. DIMENSION L IS MEASURED IN GAGE PLANE
PACKAGE MARKING DESCRIPTION
RECOMMENDED LAND PATTERN
LOGO
8804
FAWLT
NOTE: LOGO - AOS LOGO 8804 - PART NUMBER CODE. F - FAB LOCATION A - ASSEMBLY LOCATION W - WEEK CODE. LN - ASSEMBLY LOT CODE
TSSOP-8 PART NO. CODE
PART NO. AO8804
CODE 8804
UNIT: mm
Rev. A
ALPHA & OMEGA
SEMICONDUCTOR, INC.
TSSOP-8 Carrier Tape
TSSOP-8 Tape and Reel Data
TSSOP-8 Reel
TSSOP-8 Tape
Leader / Trailer & Orientation

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